Abstract
AbstractThe dielectric and electrical properties of sandwiched AlInSeAl structures of different thicknesses are investigated. For all the thicknesses the capacitance and tan δ decrease with increase in frequency. The I‐V characteristics of Al‐InSe‐Al structures have been studied for different thicknesses. These curves exhibit three regions ohmic, non‐ohmic and breakdown regions. Optical micrographs of breakdown patterns at different stages have been taken and the results are discussed.
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