Die-attachment technologies for high-temperature applications of Si and SiC-based power devices

Abstract

In this work, die-attachment technologies for Si and SiC-based power devices are presented, which are suitable for high-temperature applications. Commercially available SiC Schottky diodes were used for the tests. State-of-the-art silver sintering and transient liquid phase bonding along with conductive adhesive technology were used as die-attachment methods. For interconnection, a novel aluminum alloy (AlX) was used. A performance comparison of the aforementioned die-attach technologies was made. Various characterizations such as shear strength, thermal resistances etc. were made for each die-attach material. The diode assemblies were electrically characterized with respect to forward IV-curves and maximum current capabilities. Passive temperature cycling from −40 to +150 °C and active power cycling with various junction temperature differences ΔT j were performed. An estimation of initial reliability is presented for these die-attach technologies.