Abstract
Copper single crystals (diameter: 5–10 mm, length: 10 cm) were grown by the Czochralski method. The crystals were free from dislocations, when they were grown under optimal conditions: [100]-growth direction, high vacuum and medium pulling speed (6 cm/h). Lattice defects were caused by the following unfavourable growth conditions: (a) when grown with [110]-orientation of the growth direction or grown under hydrogen the crystals contain subgrains, (b) growth under impure Ar caused prismatic loops around Cu2O-particles and (c) micro-segregation caused by a high pulling speed.In the dislocation-free copper single crystals three kinds of defects were observed: (a) vacancy-clusters (volume density: 106 cm−3), (2) voids (∼ 105 cm−3, (3) a kind of defect not identified till now, which generates holes on the surfaces of the crystal samples when they are electropolished.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
