Abstract
In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.
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