Abstract
In this work the influence of Selective Epitaxial Growth (SEG) is studied using standard and biaxially strained devices, analyzing the Drain Induced Barrier Lowering effect (DIBL). The use of SEG promotes an increase of DIBL in devices with variable fin width and channel lengths. Contrary to the NO SEG behavior previously studied, standard devices present better DIBL values. In order to explain that change, the resistance distribution in the device was studied since the use of SEG promotes a decrease on the parasitic series resistance.
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