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Abstract
Medium-band-gap polymers based on indacenodithiophene (IDT) and dibenzothiophene-S,S-dioxide (SO) derivatives, PIDT-SO and PIDT-DHTSO, were synthesized via a microwave assisted Stille polycondensation. The polymers have the maximum absorption ∼500nm, high absorption coefficients above 0.6×10−2nm−1, and medium band gaps of ∼2.2eV. Their hole mobilities are around 2×10−4cm2V−1s−1 as measured by field effect transistors. The photovoltaic performances of the polymers were investigated on the inverted bulk heterojunction (BHJ) devices of ITO/PFN/PIDT-DHTSO:PC71BM (1:3, w/w)/MoO3/Al, and a power conversion efficiency (PCE) of 3.81% with an open-circuit voltage (Voc) of 0.95 V, a short-circuit current (Jsc) of 8.20mAcm−2 and a fill factor (FF) of 48% were achieved. Those results indicated that dibenzothiophene-S,S-dioxide derivatives could be an excellent electron-deficient building block for medium-band-gap electron-donor polymers.
Published Version
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