Abstract
Abstract A low-pressure flat flame burner was constructed and used to grow diamond films on silicon and molybdenum substrates in oxygen-acetylene flames at 40 Torr. Both isolated, well faceted diamond particles and continuous films covering the entire substrate (12 cm2) were grown. Nucleation was found to be significantly enhanced by altering the flame conditions initially, thereby depositing a thin, non-diamond carbon layer onto the silicon substrates. This procedure was required to grow continuous films. Flame simulations were carried out, and explain why the flame stoichiometry required for diamond growth at low pressure differs significantly from that required at atmospheric pressure.
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