Abstract
A study of diamond films for electronic device application is reviewed based on our resent experimental results on homoepitaxil diamond films. High quality homoepitaxial diamond films have been successfully grown on (001) diamond substrate by introducing a concept of “clean epitaxiy”. Atomic force microscopy (AFM) images have indicated that the surface of these films has atomically flat region and the films were grown by a step-flow mode. Current-voltage characteristics of Al/diamond Schottky diodes prepared with these films show excellent rectification properties with the very low level of the reverse current which has never been reported. Cathodoluminescence (CL) experiments at room temperature on these films also show a clear spectrum due to a free exciton for first time. These experimental results suggest that the diamond films grown by the step-flow mode have a potential for electronic device application.
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