Abstract
Bias-enhanced nucleation of diamond on Si, and the following growth until a continuos film, using a MWCVD system, has been studied by surface techniques of high resolution as Angle-Dependent X-ray Absorption Near-Edge Spectroscopy and Atomic Force Microscopy. It has been observed that the evolution of diamond nucleation is according to Tomellini's model: sequence of active sites, germs and nuclei. The nuclei growth starts on top of a graphitic layer which is formed by subplantation as a consequence of the ionic bombardment during the nucleation. The bias-enhanced nucleation time affects to the sample morphology. Diffusion processes on the surface in the diamond nucleation will be also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
