Abstract
A bias-enhanced nucleation (BEN) technique in hot-filament chemical vapor deposition (HF-CVD) has been applied to singlecrystalline 6H-SiC substrates for diamond nucleation. The oriented diamond film has been grown on a 6H-SiC substrate. The experimental results have shown that the 6H-SiC substrate surfaces are etched by the reactive hydrogen species during the BEN process, and many inclined-pyramid crystals with {01\\overline14} type faces are formed on the substrate surface. The array direction of the inclined-pyramid crystals is determined by the diffusion direction of the reactive hydrogen species existing in the plasma sheath and the specific free surface energy of the substrate. Diamonds nucleate on the top of the inclined-pyramid crystals. Diamond nucleation density is higher on the (0001)face than on the (000\\overline1)face. The relationship between the inclined-pyramid crystals and the diamond nuclei is investigated using scanning electron microscopy.
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