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Abstract
Carrier confinement in nanowire (NW) structures can offer a host of new material properties compared to bulk electronic devices. Diamond can be considered an ultimate semiconductor given its superlative electronic, physical, and optical properties. However, the development of diamond device technology has been hindered by doping problems in conventional device structures. Here, heavily doped diamond NWs, some 15 nm wide and only 1–2 nm deep overcome these issues and offer a significant advance in NW technology; transistor action can be induced with remote side gates alone, without the need for semiconductor junctions. Quasi‐ballistic transport is most‐likely responsible for extraordinary current handling capability of the NW transistors fabricated here at some 20 MA cm−2, being around 0.04 G0. This unipolar technology opens up a new paradigm in diamond nanoelectronic device technology.
Highlights
Carrier confinement in nanowire (NW) structures can offer a host of new material Extreme nm-material confinement properties compared to bulk electronic devices
NW devices formed from carbon nanotubes (CNTs) have a new paradigm in diamond electronic device technology, aroused considerable interest since they can support ballistic overcoming issues normally associated with the lack of an transport, i.e., conduction with negligible electrical resistivity caused by scattering, and can display quantum effects;[10]
Data for the boron doping profile, measured by elastic recoil detection analysis (ERDA), for this material is shown in Figure 2; the surface of the sample is nominally taken to be at the position labeled as 0 nm, indicating a doped layer of %1 nm, with a peak boron doping concentration of %8 Â 1020 cmÀ3
Summary
Ultrathin heavily boron-doped layers were used, grown on highquality synthetic single crystal diamond substrates, using a plasma method as described previously.[16]. HSQ shows good selectivity as a mask when exposed to an oxygen reactive ion-etching (RIE) plasma This enabled a mesa etch process to leave isolated ultra-thin boron layers supported upon insulating diamond regions protruding from the insulating diamond substrate. The mesa etch process produced four side gates, two each side of the NW such that a field could be applied across the NW; to ensure isolation a gap of %50 nm was left between the side-gate boron-doped structures. All I–V measurements were taken using probes within a vacuum system attached to a Keithley 4200 semiconductor analyzer
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