Abstract
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
Highlights
Photoluminescent impurities or impurity complexes in diamond, often termed color centers, are attractive solid-state, atom-like systems
In contrast to thermometry based on nitrogen vacancy centers, silicon vacancy (SiV) enable all optical measurements without the need for microwave radiation
SiV centers into diamond nanostructures remains partly challenging: First experiments on individual, bright SiV centers used NDs grown by chemical vapor deposition (CVD) on iridium substrates.[2]
Summary
Photoluminescent impurities or impurity complexes in diamond, often termed color centers, are attractive solid-state, atom-like systems. Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies We obtain narrow ZPL from dense SiV center ensembles in nanostructures, namely diamond pyramids (DPs, from Artech Carbon).
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