Abstract
Dielectric barrier discharge at atmospheric pressure has been applied to prepare diamond-like hydrogenated amorphous carbon films on glass and silicon substrates from CH4–H2 mixtures. The coating with Knoop hardness up to 10 GPa can be deposited under CH4-to-H2 ratio of 1:2 and substrate temperature of 300°C. The IR absorption analysis of the coating shows, that its hydrocarbon group ratio [CH3/(CH2+CH)] and C–C bond type ratio (sp3C/sp2C for CH and CH2 groups) are 20%:80% and 15:1, respectively.
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