Abstract
Hydrogenated diamond (CH diamond) inverters have been fabricated by normally-off Al/BaF2/C-H diamond metal-insulator-semiconductor field effect transistors (MISFETs) and load resistors. Electron beam evaporation was used to deposit BaF2 film on the diamond surface at room temperature to reduce thermal degradation effect on the CH bond and adsorbates during the deposition. The resulting 4-μm normally-off MISFET achieves the maximum saturation drain current, on-resistance, maximum transconductance and switching ratio of −113.4 mA/mm, 37.1 Ω·mm, 35.4 mS/mm and 108, respectively. Effective hole mobility of more than 200 cm2/V·s is achieved in a large gate voltage range (−0.35 V ≤ VGS -VTH ≤ −4.35 V). Correspondingly, based on the high-performance diamond MISFET, the diamond inverters exhibit good voltage transfer characteristics and dynamic switching characteristics at the frequency of 50 kHz.
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