Abstract
ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.
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