Abstract
Diamond film growth without seeding treatment has been the subject of numerous studies. In the present study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely, “dry ultrasonic treatment”, was introduced in which full coverage of diamond film was achieved on unseeded substrate. For comparison, one substrate was seeded with 5μm diamond particles, prior to deposition. The resulting diamond films were examined through standard characterization tools and distinct features were observed in each film. Here we present the results of uniform and high purity diamond film, free from nano-sized grains, which is grown without seeding treatment and is expected to be potential candidate for electro-optical applications, particularly as heat sinks.
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