Abstract
Diamond is a promising material for implantable electrodes due to its unique properties. The aim of this work is to investigate the growth of boron-doped nanocrystalline diamond (B-NCD) films by plasma-enhanced microwave chemical vapor deposition at various temperatures, and to propose optimal diamond growth conditions for implantable electrodes. We have investigated the temperature dependence (450 °C–820 °C) of boron incorporation, surface morphology and growth rate on a polished quartz plate. Surface morphology and thickness were examined by atomic force microscopy (AFM).The quality of the films in terms of diamond and non-diamond phase of carbon was investigated by Raman spectroscopy. AFM imaging showed that the size of the grains was determined mainly by the thickness of the films, and varied from an average size of 40 nm in the lowest temperature sample to an average size of 150 nm in the sample prepared at the highest temperature. The surface roughness of the measured samples varied between 10 (495 °C) and 25 nm (800 °C). The growth rate of the sample increased with temperature. We found that the level of boron doping was strongly dependent on temperature during deposition. An optimal B-NCD sample was prepared at 595 °C.
Highlights
An implantable electrode is an invasive electronic device, and for this reason there are very high requirements on the materials that are used
We investigate the temperature dependence of boron incorporation, surface morphology and growth rate
We have investigated the quality of boron-doped nanodiamond films prepared at various temperatures in order to find the optimal conditions for application in implantable electrodes
Summary
An implantable electrode is an invasive electronic device, and for this reason there are very high requirements on the materials that are used. The electrodes must not adversely affect the health of the patient [1]. Diamond is a promising material for implantable electrodes due to its unique properties. It is the hardest material in nature. It has extreme wear resistance and resistance to chemical corrosion. It is a great thermal conductor, and its thermal expansion coefficient at room temperature is very low. Diamond can be doped, and it becomes a semiconductor. It does not melt during current flow, and it has a wide potential window [2]
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