Abstract
Atomic force microscopy was successfully applied for the reproducible nanomachining of in-plane gate transistors made from GaAs/AlGaAs heterostructures. Electronic devices with structures of less than 50 nm dimensions were realized by scribing with a pointed cantilever probe. This process demands tips made of an extreme hard material with sufficiently low abrasion. For this purpose all-diamond cantilever probes made of polycrystalline diamond films were proven to be ideally suited. The separate definition of the lateral and vertical probe geometry during diamond cantilever fabrication offers important advantages in comparison to conventionally moulded probes that will be discussed in some detail.
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