Abstract
Features of an application of a High-overtone Bulk Acoustic Resonator (HBAR) as a high-pressure sensor have been considered. In this way, the second version of an integrated measurement system combining a Diamond Anvil Cell (DAC) and an HBAR operating in the microwave frequency band from 1.3 to 3.7 GHz was developed. A specific configuration of HBAR based on a piezoelectric layered structure as “Al/ASN/Mo/(100) diamond” was proposed. Two independent methods of pressure control were used to calibrate the embedded HBAR as a pressure sensor: a stress-induced shift of the diamond Raman line and the shift of the R1 luminescence line of Cr3+ in the ruby matrix. A stable correlation between the frequency shifts of the acoustic overtones in the HBAR, the shift of the diamond Raman line and the shift of the R1 line with a change in pressure applied to the W-gasket with embedded ruby particles was established in the range of 0 … 30 GPa. The sensitivity of an investigated sensor to the pressure variation was found to be equal 1ΔPΔff=4.8∙10-4GPa-1. The maximal value of 30 GPa obtained in a given work can be easily increased after a minor reconfiguration of the DAC. Considering the range of 0 − 5 GPa a proposed built-in DAC acoustoelectronic sensor has the better performance and sensitivity compared with known methods of a pressure measurement.
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