Abstract

Despite various methods available theoretically and experimentally for material characterization, the ultrasonic characterization method has proven as one of important method because of its non-destructive evaluation (NDE) technique. This chapter explores the ultrasonic characterization of wide band gap semiconducting material SiC at nanoscale. In the present chapter, diameter dependent nonlinear elastic properties (second and third order elastic constants), thermophysical properties, and ultrasonic properties of single crystalline SiC-nanowires have been computed using Lennard-Jones potentials in the high temperature regime. The size dependent mechanical and ultrasonic properties of the SiC-nanowires and their mechanical stability has also been estimated using the higher order elastic constants of the material. The correlation between size dependent ultrasonic attenuation and thermophysical properties have been established for the SiC-nanowires. Obtained results are discussed in correlation with available theoretical/experimental results for application in nanodevices.

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