Abstract
The Knight shift of positive muons (μ+) implanted in semiconducting single crystals of Bi1−xSb x (x=0.085, 0.14, 0.19) has been measured as a function of temperature and sample orientation. The Knight shift (KS) is generally negative and is found to scale with the negative total macroscopic susceptibility; the scaling is independent ofx but dependent on the orientation. One concludes that only the valence and conduction bands near theL-symmetry point in the Brillouin zone contribute to the μ+ Knight shift, most likely by the contact hyperfine interaction. Furthermore the valence bands and the conduction bands seem to be associated with the same hyperfine coupling constants. These conclusions are quite unexpected and call for a new theoretical approach.
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