Abstract
AbstractThe effect of the diamagnetic shift on the formation of excitons is investigated for double layer semiconductor systems in which electrons and holes are spatially separated. The effect of disorder due to interface roughness of the double layer structures is included in the calculation of exciton density. Numerical calculations are performed based on an effective lattice‐gas model where the electron–hole system is divided into unit cells. The exciton density is calculated by using the partition function method. The effect of the nonlinear Zeeman splitting is also included in the numerical calculations. It is found that the density of the optically allowed exciton states (excitons with Sz = 0) increases under the influence of either or both the diamagnetic and the nonlinear Zeeman shifts.
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