Abstract
The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An analysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence of the noise is no longer valid if the noise in the series resistance is dominant. Large generation-recombination noise components, with the dependence S I ∝ I 4, point to poor device contact quality.
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