Abstract
Measurements of velocity distributions of C, B, and Si atoms released in sputtering processes from graphite and carbide targets bombarded with noble gas ions in the 1 keV range are described. Laser-induced fluorescence spectroscopy in the VUV is applied. The VUV radiation necessary to excite the sputtered atoms is provided by stimulated anti-Stokes Raman scattering (SARS) in H2. Surface binding energies are derived from measured velocity distributions; concentrations of sputtered particles, fluxes and sputtering yields are determined.
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