Abstract
Mechanisms of plasma-surface interaction are required to understand in order to control the reactions precisely. Recent progress in atmospheric pressure plasma provides to apply as a tool of sterilization of contaminated foodstuffs. To use the plasma with safety and optimization, the real time in situ detection of free radicals - in particular dangling bonds by using the electron-spin-resonance (ESR) technique has been developed because the free radical plays important roles for dominantly biological reactions. First, the kinetic analysis of free radicals on biological specimens such as fungal spores of Penicillium digitatum interacted with atomic oxygen generated plasma electric discharge. We have obtained information that the in situ real time ESR signal from the spores was observed and assignable to semiquinone radical with a g-value of around 2.004 and a line width of approximately 5G. The decay of the signal was correlated with a link to the inactivation of the fungal spore. Second, we have studied to detect chemical modification of edible meat after the irradiation. Using matrix-assisted laser desorption/ionization time-of-flight mass spectroscopy (MALDI-TOF-MS) and ESR, signals give qualification results for chemical changes on edible liver meat. The in situ real-time measurements have proven to be a useful method to elucidate plasma-induced surface reactions on biological specimens.
Highlights
To understand the dynamic changes in bonding configurations during processing and surface reactions, direct observation of the formation and destruction of dangling bonds will provide important information
Westenberg reported that gas-phase radicals and their chemical reactions could be analyzed using the electron spin resonance (ESR) technique.[1,2]
Fungal spores of Penicillium digitatum were disinfected by applying atmospheric pressure plasmas of argon gas containing trace oxygen
Summary
To understand the dynamic changes in bonding configurations during processing and surface reactions, direct observation of the formation and destruction of dangling bonds will provide important information. Westenberg reported that gas-phase radicals and their chemical reactions could be analyzed using the electron spin resonance (ESR) technique.[1,2] Previously, Yamasaki et al succeeded in attempts to measure dangling bonds in situ during silicon film growth using ESR.[3] Subsequently, they investigated the plasma processes for plasma etching of dielectric materials and diamonds using in vacuo and in line ESR techniques.[4,5,6,7,8,9,10] This is an Open Access article published by World Scientific Publishing Company. Dynamical Changes of Fungal Spores of Penicillium digitatum during Exposure of Oxygen Plasmas 18
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