Diagnostics of degradation processes in the metal-semiconductor system

Abstract

A mathematical model of thermal operational modes of the metal-semiconductor contact pair is constructed based on the analysis of the temperature fields in a semiconductor wafer with a surface heat source in a form of the metallization layer. The influence of current pulses with an amplitude j 5 × 1010 A/m2) on the metallization systems is analyzed in detail. It is shown that the degradation processes in such structures under the pulsed current perturbation are associated with the local nucleation of the liquid phase and contact melting in the metal-semiconductor system. A procedure, which ensures the diagnostics of multilayer thin-film metallization systems right up to the development of degradation processes upon the passage of rectangular current pulses through them, is suggested.