Abstract
InAs(N) quantum-dot structures grown by metal-organic vapor-phase epitaxy on GaAs(001) substrates were studied. The growth process included deposition of thin InGaAs and GaAs layers above the quantum dots at a lower temperature. Subsequently, a thick GaAs barrier layer was grown at a higher temperature. This procedure resulted in the removal of undesirable large islands while retaining small ones. An indium excess from dissolved islands was transferred to an additional InGaAs layer detected by X-ray diffractometry.
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Schedule a callMore From: Bulletin of The Russian Academy of Sciences: Physics
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