DFT study of Hydrogen storage capacity on Hf doped graphene

Abstract

We explored the molecular hydrogen storage capacity of complex system with Hafnium doped graphene (Gr-Hf) using the Density Functional Theory (DFT) method. We efficiently adsorbed molecular six hydrogens on the Hf doped graphene surface. The quantum chemically calculated adsorption energy is found negatively in the range of - 344.433 Ry to -333.836 Ry this implies as increasing the adsorbed hydrogen molecule on hafnium doped graphene (Gr-Hf) sheet the adsorption energy decreases continuously. The binding energy of after adsorbing second hydrogen molecule too much larger than the next adsorbed H2 molecules i.e., the binding energy per hydrogen molecule highly decreases when we increase adsorbed atom (2.197 Ry in 2H2 to 1.048 Ry in 3H2) then small decreases for next adsorbed H2 molecules. The extracted binding energy found in the range 2.197 Ry to 2.120 Ry, fermi energy found minimum for 1H2 shows the minimum electron occupancy at the different energy levels. The fermi energy increases accordingly, the electron occupancy also increases and evaluates higher electron occupancy with fermi energy 2.850 eV for 6H2 and density of states (DOS) confirm the weak interaction between σ bonding electrons of H2 molecule with Hf doped graphene complex system. The proposed system opens a new insight for hydrogen storage-based devices.