Abstract
Conventional spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) with CoFeB electrodes has great potential as universal memory. However, state-of-the-art STT-MRAM technology has encountered the issues such as high writing current density and low thermal stability for scaling down to <inline-formula> <tex-math notation="LaTeX">$1\times $ </tex-math></inline-formula> nm. Heusler alloy has been suggested as an alternative to resolve these problems by significantly reducing the Gilbert damping constant while preserving approximately 100% spin polarization. In particular, <inline-formula> <tex-math notation="LaTeX">$L2_{1}$ </tex-math></inline-formula>-ordered Co<sub>2</sub>FeAl (CFA)-based magnetic tunnel junction (MTJ) exhibits outstanding half-metallicity and perpendicular magnetorcystalline anisotropy characteristics arising from Co(Fe)-O orbital hybridization at the interface. In this work, we investigate the biaxial strain effects of CFA-based MTJ by adjusting in-plane lattice constants from −4% to +4%. Our density functional theory - nonequilibrium Green’s function (DFT-NEGF) calculations present that FeAl-O interfaced MTJ shows a converged tunneling magnetoresistance (TMR) ratio under compressive strain while Co<sub>2</sub>-O interfaced MTJ shows strain-sensitive TMR ratio under both compressive and tensile strain. The difference in the current-density trends for the two types of MTJs is mainly attributed to the additional state arising from Fe-O bonding. Our results emphasize the careful control of straintronic techniques on CFA-MTJs.
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