Abstract

We explore influence of Mg alloying effect on electronic band structure dispersion and thermoelectric properties of tin chalcogenide materials. Based on density functional theory (DFT) within a framework of full potential linearized augmented plane wave method (FP-LAPW), we evaluate the energy band structure and optical properties of MgxSn1-xSe (x = 6%, 12% and 18%) materials. Moreover, we extend our calculations to simulate the electrical transport properties using Boltzmann transport theory. Within the approximations employed in our calculations the theoretically predicted band energy gap values and the temperature dependence of electrical transport properties of MgxSn1-xSe compounds revealed that the Mg-alloying have enhanced thermoelectric features. To verify the quality of calculations the comparison with the experimental absorption spectra are presented. The better thermoelectric performance in MgxSn1-xSe is expected to occur for all doping concentrations, however 18% Mg-doped material exhibits higher value of Seebeck coefficient and lower thermal conductivity which is suggestive that at higher Mg concentration the holes become dominant over electrons and hence make these materials to be more promising candidates for their use in thermoelectric power generation and in cooling devices.

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