Abstract
We present a novel device technology to produce DFB laser diodes which are suitable for tunable diode laser spectroscopy. The new technological approach employs lateral metal distributed feedback (DFB) gratings in close proximity to the laser ridge which results in single mode emission with high spectral purity and output powers as required for most spectroscopic applications. Over the entire wavelength range from the visible (760 nm) up to the near-infrared (2.5 μm) single mode emission can be obtained for devices based on different semiconductor systems such as GaAs, InP and GaSb. Typical side mode suppression ratios are better than 35 dB for cw-room temperature operation and narrow linewidths ensure high spectroscopic resolution.
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