Abstract
Erbium-doped tellurite modified silica (EDTS) is a newly formulated silicate glass that has the potential to realize on-chip optical amplifiers. The devitrification process of EDTS layer on host silica glass has been studied in the temperature range 300°C–1000°C. In-situ high-temperature X-ray diffraction, selective area electron diffraction and high-resolution transmission electron microscopy revealed the amorphous phase of EDTS as-fabricated up to 600°C and rapid irreversible crystalline phase developments above 600°C, contrasting the host silica. Distinct structural evolutions of EDTS with the variation in temperature were observed, including a complete evaporation of TeO2 at 800°C from the matrix.
Highlights
Erbium doped silicates are the sole material platforms for manufacturing erbium-doped fiber amplifiers (EDFA) that are efficient optical signal boosters used in a fiber optic communication systems [1,2,3,4,5]
Minimally doped long lengths (N5m) of EDFAs are maintained in current optical communication networks, which cannot be incorporated in the new generation compact integrated circuits that combine both optical and electrical components on a single substrate such as silicon photonics [10,11,12,13,14,15]
To realize compact optical amplifiers, we have developed a prospective material platform - erbium-doped tellurite modified silicate (EDTS) - by overcoming the fundamental limitations of erbium doping in silica utilizing a femtosecond laser plasma assisted novel process [16,17,18]
Summary
Erbium doped silicates are the sole material platforms for manufacturing erbium-doped fiber amplifiers (EDFA) that are efficient optical signal boosters used in a fiber optic communication systems [1,2,3,4,5]. Prior to the high-temperature studies, the room temperature (25 °C) XRD, HRTEM images and SAED patterns were obtained from the sample to identify the basic structure of EDTS as-fabricated.
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