Abstract
The designs of two devices that can be created by using of crossed nanowires are considered: the first is a field-effect transistor with a metal gate and the second is a memory cell. The potential reliefs of the structures are formed due to the dimensional quantization of the electron energy. Calculations of the expected characteristics of the devices were carried out. It is shown that the considered field—effect transistor can provide a subthreshold slope significantly exceeding a thermoemission limit, and the memory cell provides time of information record in the order of ten femtoseconds.
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