Abstract
It is shown that bipolar circuits can continue to play an important role in high performance LSI and VLSI circuits, because power supply voltages and logic swings can be minimized independently of transistor dimensions, and because the speed degradation due to on-chip wiring capacitances in less severe than in MOS/MES-FET types of circuit. General performance improvements (in speed and packing density) of logic gates are obtained by increasing transistor f T, and decreasing parasitic capacitances, series resistances and device areas, by using oxide isolation, self-aligned techniques and polysilicon electrodes. Fast switching diodes (such as Schottky barrier diodes and lateral poly-diodes) improve the flexibility of circuit design. Logic circuits (such as I 2L, LS, DTL, ISL, STL, ECL and NTL), which already perform in LSI and VLSI circuits or are realistic proposals for them, are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
