Abstract
Two-dimensional device simulation of submicrometer gate diamond p/sup +/-i-p/sup +/ transistors with a SiO/sub 2/ gate insulator was investigated using the MEDICI device simulation program. A large modulation of the source-to-drain current was obtained in the accumulation mode. The computed diamond device characteristics were equivalent or better than the simulation results of 6H-SiC MESFET's. It was concluded that the problems in diamond MESFET associated with the deep acceptor levels due to boron doping can be overcome in the p/sup +/-i-p/sup +/ diamond FET's because of the hole injection and the space charge limited current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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