Device Simulation of Ditch and Elevated Electrode Structures in Organic Thin-Film Transistors

Abstract

A novel organic thin-film transistor structures named the “ditch structure” or “elevated electrode structure” is proposed. Device simulations show that the electrical properties of this structure are almost the same as those of a staggered structure (top-contact structure). These results are explained in terms of the electric field concentration at source electrodes with sharp corners and the electric field being vertical to the direction of the gate. The manufacturing process of this structure is as simple as that of a planar structure (bottom-contact structure), and the performance is as high as that of a staggered structure.