Abstract
Quantum well infrared photodetectors (QWIPs) have been developed very quickly and large format focal plane arrays with low noise equivalent temperature difference, and high uniformity and operability have been demonstrated. Using high quality GaAs material systems, QWIPs have the potential for high production yield, low cost and low power consumption. QWIP’s multicolor detection capability makes it especially attractive for advanced infrared sensor systems. The basic device physics and detector design of QWIP structures will be given in this paper. A brief comparison of QWIPs with HgCdTe detectors will be discussed, and the state-of-the-art of the QWIP focal plane array technology will be presented.
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