Abstract
This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists of a switching ferroelectric layer and two nonswitching dielectric or buffer layers. This model predicts the dependence of the polarization charge density P d, the electric field in the ferrolelectric film ε fe , the voltage across the dielectric stack V OX , the semiconductor surface potential ψ SC , and the semiconductor charge density Q SC on the gate-to-bulk voltage V GB under static conditions. The low- and high-frequency capacitance-voltage characteristics of MFS capacitors are calculated.
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