Abstract
The device performance of silicon nanotube field effect transistor (Si-NT-FET) having tubular channel and controllable by an inner and outer gates is presented. The inner and outer gates render effective charge control inside the channel providing the Si-NT-FETs excellent immunity to short channel effects. Evaluations of electrical performances of Si-NT-FET using well calibrated 3D device simulations show that Si-NT-FETs can outperform Si-nanowire (NW)-FETs in terms of drive currents and SCEs. Our evaluation further shows that Si-NT-FETs can provide ~2× higher drive current compared to Si-NT-FET of the same diameter. This excellent electrical performance makes Si-NT-FETs promising candidates to extend CMOS scaling roadmap beyond Si-NW-FET.
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