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Abstract
The device performance of p-channel Ge MOSFETs at liquid nitrogen temperature is reported and initial results of room temperature irradiation with 2-MeV electrons on the cryogenic device performance is described. It is shown that at 77 K an increase of the drain current and g m is observed. This increase of the g m can be explained by considering the balance between reduced phonon scattering on the one hand and increased Coulomb scattering by interface states, on the other. After irradiation, a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed together with a decrease of the transconductance ( g m).
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