Device operation of p-i-p type diamond metal–insulator–semiconductor field effect transistors with sub-micrometer channel

Abstract

Sub-micrometer p-i-p type diamond metal–insulator–semiconductor field effect transistors (FETs), which are composed by p + layers by B ion implantation and intrinsic channels deposited by a selective epitaxy, are fabricated. The current flow in the FET with a sub-micrometer channel are investigated by repeating measurements under a same bias sweep, and the current drift and the degradation of the device characteristics between the repeated measurements are observed. Distribution of the current density in the fabricated FET is analyzed by using a device simulator. The conduction mechanism and the carrier paths in the devices are discussed.