Abstract
An approach to develop room temperature detectors is to use transitions between the light/heavy hole bands and the split-off hole band to produce enhanced response at high temperature. Results are presented on a theoretical model to predict the response in these split-off detectors. The model calculates the dark and illuminated currents from the photoabsorption, carrier escape, and transport, explaining the experimental response. The variation in dark current, responsivity, and D∗ with the detector parameters is presented.
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