Device Isolation in Hybrid Field-Effect Transistors by Semiconductor Micropatterning Using Picosecond Lasers

Abstract

Leakage currents are the bugaboo of thin-film electronics. In this study field-effect transistors, made of either ZnO film or bilayers of tellurium and organic oligomer, are machined using picosecond laser pulses, leaving the SiO${}_{2}$ substrate beneath unharmed, due to its different optical absorption. This approach (1) provides almost no variation in structure or performance from device to device, (2) enables patterning of novel materials that may be soft or easily damaged, and, critically, (3) drastically reduces gate leakage compared to traditional fabrication techniques.