Abstract
A Schottky barrier height extraction method for one dimensional nanoFETs based on the Landauer-Büttiker equation and a transistor architecture with a displaced gate is presented. In contrast to the conventional activation energy method developed for 3D material interfaces, the proposed extraction method eases the identification of the flat-band voltage and thus the Schottky barrier height. The methodology is applied to simulation data of single-tube carbon nanotube field-effect transistors feasible for manufacturing and to experimental data of nanoFETs. In both cases, the results with the proposed methodology turn out to be closer to the reference values than the ones obtained with the conventional method.
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