Abstract
Ambipolar pentacene transistors in bottom contact-bottom gate geometry are fabricated on flexible substrates using parylene as a dielectric and self-assembled monolayer treatment of the source-drain electrodes to improve charge injection. Hole and electron mobilities of 0.07-0.1 cm2 V−1 s−1 and 0.01-0.04 cm2 V−1 s−1 are achieved. CMOS like inverters are built and gains of up to 110 are reported.
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