Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

Abstract

InAlN/GaN epilayer on AlN/Sapphire template was grown by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density ns = 2.6×1013 cm-2 and a Hall mobility as high as µHall = 1170 cm2 V-1 s-1 at room temperature. The electrical characteristics of the fabricated high-electron-mobility transistors (HEMTs) having 2 µm gate length and 15 µm gate width were demonstrated. Maximal-drain-current IDmax = 1299 mA/mm, and maximal transconductance gmmax = 280 mS/mm were achieved for the InAlN barrier layer thickness of 10 nm. Reduced current collapse and as well as breakdown voltage as high as 400 V were observed.