Abstract
A 30-V thin-film SOI power MOSFET having a tungsten polycide gate with a linear gate topology has been fabricated at a practical device level. Its electrical characteristics were successfully demonstrated for the first time. The experimental device has 1010 unit cells and a total gate width of 4.04 cm, It has a specific on-resistance of 92 m/spl Omega//spl middot/mm/sup 2/ and breakdown voltage of 33 V. The device's various parasitic capacitance characteristics were measured and compared with those of a lateral power MOSFET fabricated on a bulk-silicon substrate.
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