Abstract
The P-channel DINOR flash memory, which uses the band-to-band tunneling induced hot electron (BBHE) program method having the advantages of high scalability, high efficiency, and high oxide reliability, was fabricated by 0.35-/spl mu/m-rule CMOS process and was investigated in detail. An ultra-high programming throughput of less than 8 ns/byte (=4 /spl mu/s/512 byte) and a low current consumption of less than 250 /spl mu/A were achieved by utilizing 512-byte parallel programming. Furthermore, we investigated its endurance characteristics up to 10/sup 6/ program/erase cycles, and window narrowing and G/sub m/ degradation were found to be very small even after 10/sup 6/ cycles. It is thought that the BBHE injection point contributes to the G/sub m/ stability and the oxide-damage-reduced operation contributes to the good window narrowing characteristics. The P-channel DINOR flash memory realizing high programming throughput with low power consumption is one of the strongest candidates for the next generation of high-performance, low-voltage flash memories.
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