Abstract
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.
Highlights
Carbon nanotubes (CNTs) have been proposed as an alternative channel material to silicon (Si), based on their quantum transport properties which, in principle, allow ballistic transport at room temperature
We report the potential of a CNT channel through modeling as a substitute to a silicon channel in a scaled metaloxide-semiconductor field-effect transistor (MOSFET) for logic applications
The modeling results point to significant reduction in drain-induced barrier lowering (DIBL) and related high field effects in the CNT compared to the short-channel nanoscale Si MOSFET at the same output current
Summary
Carbon nanotubes (CNTs) have been proposed as an alternative channel material to silicon (Si), based on their quantum transport properties which, in principle, allow ballistic transport at room temperature. CNT ballistic modeling [1] has been used to assess the performance of the device at the HSPICE circuit level [2]. Device modeling is vital for projecting the practical performance of a CNT transistor as a switching device in integrated circuits (ICs). We report the potential of a CNT channel through modeling as a substitute to a silicon channel in a scaled metaloxide-semiconductor field-effect transistor (MOSFET) for logic applications. By scaling the Si transistor and the density of states (DOS) of the CNT, we observe good agreement between CNT and ballistic Si MOSFET [3] in the drain current–voltage (I-V) output characteristics. Output current is critical in determining the switching speed of a transistor in logic gates.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
