Abstract
AbstractA one‐dimensional analytical model of 2DEG‐FETs has been developed in which the effect of the source‐gate resistance Rsq and velocity saturation are included. When the electron mobility μ, the electron drift peak velocity Ve, the source‐gate resistance Rsg and the AlGaAs film thickness d are varied, the corresponding transconductance gm and the conductance coefficient K are numerically studied in detail. With the present model, the device characteristics of the “MIS”‐like 2DEG‐FET with a thick n+‐GaAs cap layer and an undoped AlGaAs gate have been analyzed. From the point of application of 2DEG‐FETs to a high speed LSI, the design guideline of the device has been studied. For the device parameters of the gate length Lg = 0.2 μm, the transistor width W = 10 μm, Rsg = 15 Ω, d = 22 mm, μ = 8000 cm2/Vs and Ve = 2 × 107 cm/s, the expected device characteristics are K = 10.0 mA/V2, the sourcegate capacitance Cgs = 10.0 fF, gm = 700 mS/mm and fT = 110 GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronics and Communications in Japan (Part II: Electronics)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
